?2001 fairchild semiconductor corporation hgtp7n60c3d, hgt1s7n60c3ds rev. b hgtp7n60c3d, hgt1s7n60c3ds 14a, 600v, ufs series n-channel igbt with anti-parallel hyperfast diodes the hgtp7n60c3d and hgt1s7n60c3ds are mos gated high voltage switching devices combining the best features of mosfets and bipolar transistors. these devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on- state voltage drop varies only moderately between 25 o c and 150 o c. the igbt used is developmental type ta49115. the diode used in anti-parallel with the igbt is developmental type ta49057. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49121. symbol features ? 14a, 600v at t c = 25 o c 600v switching soa capability typical fall time. . . . . . . . . . . . . . . . 140ns at t j = 150 o c short circuit rating low conduction loss hyperfast anti-parallel diode packaging jedec to-220ab jedec to-263ab ordering information part number package brand hgtp7n60c3d to-220ab g7n60c3d hgt1s7n60c3ds to-263ab g7n60c3d note: when ordering, use the entire part number. add the suffix 9a to obtain the to-263ab variant in tape and reel, i.e. HGT1S7N60C3DS9A. c e g gate collector (flange) emitter collector collector (flange) gate emitter fairchild semiconductor igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet december 2001
?2001 fairchild semiconductor corporation hgtp7n60c3d, hgt1s7n60c3ds rev. b absolute maximum ratings t c = 25 o c, unless otherwise specified hgtp7n60c3d, hgt1s7n60c3ds units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 14 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 7a average diode forward current at 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i (avg) 8a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 56 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c (figure 14) . . . . . . . . . . . . . . . . . . . . . . ssoa 40a at 480v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 60 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.487 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -40 to 150 o c maximum lead temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 260 o c short circuit withstand time (note 2) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 1 s short circuit withstand time (note 2) at v ge = 10v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 8 s caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. v ce(pk) = 360v, t j = 125 o c, r g = 50 ?. electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v collector to emitter leakage current i ces v ce = bv ces t c = 25 o c - - 250 a v ce = bv ces t c = 150 o c--2.0ma collector to emitter saturation voltage v ce(sat) i c = i c110 , v ge = 15v t c = 25 o c-1.62.0v t c = 150 o c-1.92.4v gate-emitter threshold voltage v ge(th) i c = 250 a, v ce = v ge t c = 25 o c 3.0 5.0 6.0 v gate-emitter leakage current i ges v ge = 25v - - 250 na switching soa ssoa t j = 150 o c, r g = 50 ?, v ge = 15v, l = 1mh v ce(pk) = 480v 40 - - a v ce(pk) = 600v 6 - - a gate to emitter plateau voltage v gep i c = i c110 , v ce = 0.5 bv ces -8- v on-state gate charge q g(on) i c = i c110 , v ce = 0.5 bv ces v ge = 15v - 23 30 nc v ge = 20v - 30 38 nc current turn-on delay time t d(on)i t j = 150 o c i ce = i c110 v ce(pk) = 0.8 bv ces v ge = 15v r g = 50 ? l = 1mh -8.5- ns current rise time t ri - 11.5 - ns current turn-off delay time t d(off)i - 350 400 ns current fall time t fi - 140 275 ns turn-on energy e on - 165 - j turn-off energy (note 3) e off - 600 - j diode forward voltage v ec i ec = 7a - 1.9 2.5 v diode reverse recovery time t rr i ec = 7a, di ec /dt = 200a/ s - 25 37 ns i ec = 1a, di ec /dt = 200a/ s - 18 30 ns thermal resistance r jc igbt - - 2.1 o c/w diode - - 2.0 o c/w note: 3. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). the hgtp7n60c3d and hgt1s7n 60c3ds were tested per jedec standard no. 24-1 method fo r measurem ent of power d evice turn -off switching loss. this tes t method produces the true total turn-off energ y loss. turn-on losses include diode losses. hgtp7n60c3d, hgt1s7n60c3ds
?2001 fairchild semiconductor corporation hgtp7n60c3d, hgt1s7n60c3ds rev. b typical performance curves figure 1. transfer characteristics fig ure 2. saturation characteristics figure 3. collector to emitter on-state voltage figure 4. collector to emitter on-state voltage figure 5. maximum dc collector current vs case temperature figure 6. short circuit withstand time i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 46 81012 0 5 10 20 25 30 35 1 4 15 40 pulse duration = 250 s duty cycle <0.5%, v ce = 10v t c = 25 o c t c = -40 o c t c = 150 o c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 0 0246810 5 10 15 12.0v 8.5v 9.0v 8.0v 7.0v v ge = 15.0v 20 25 30 35 40 pulse duration = 250 s, duty cycle <0.5%, t c = 25 o c 10.0v 7.5v i ce , collector to emitter current (a) 0 15 012345 20 v ce , collector to emitter voltage (v) t c = 150 o c t c = 25 o c t c = -40 o c 5 10 25 35 40 30 duty cycle <0.5%, v ge = 10v pulse duration = 250 s i ce , collector to emitter current (a) 0 15 012345 v ce , collector to emitter voltage (v) t c = 25 o c t c = -40 o c t c = 150 o c duty cycle <0.5%, v ge = 15v pulse duration = 250 s 5 10 20 25 30 35 40 25 50 75 100 125 150 0 3 6 9 12 15 i ce , dc collector current (a) t c , case temperature ( o c) v ge = 15v i sc , peak short circuit current (a) 60 80 120 t sc , short circuit withstand time ( s) 10 11 12 v ge , gate to emitter voltage (v) 14 15 13 140 100 40 i sc t sc 10 12 v ce = 360v, r g = 50 ? , t j = 125 o c 4 6 8 2 hgtp7n60c3d, hgt1s7n60c3ds
?2001 fairchild semiconductor corporation hgtp7n60c3d, hgt1s7n60c3ds rev. b figure 7. turn-on delay time vs collector to emitter current figure 8. turn-off delay time vs collector to emitter current figure 9. turn-on rise time vs collector to emitter current figure 10. turn-off fall time vs collector to emitter current figure 11. turn-on energy loss vs collector to emitter current figure 12. turn-off energy loss vs collector to emitter current typical performance curves (continued) t d(on)i , turn-on delay time (ns) 10 20 30 2 5 11 14 i ce , collector to emitter current (a) 50 17 2 0 40 v ge = 10v v ge = 15v t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v 8 5 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 400 350 250 200 811141720 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v v ge = 10v or 15v 300 5 500 450 2 i ce , collector to emitter current (a) t ri , turn-on rise time (ns) 5 10 100 v ge = 15v v ge = 10v 200 2 811 14 17 2 0 5 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v i ce , collector to emitter current (a) t fi , fall time (ns) 100 200 300 150 2 8 11 14 17 2 0 5 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v 250 v ge = 10v or 15v i ce , collector to emitter current (a) 40 e on , turn-on energy loss ( j) 100 500 1000 2000 2 8 11 14 17 2 0 5 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v v ge = 10v v ge = 15v i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 500 1000 3000 100 v ge = 10v or 15v 2 8 11 14 17 20 5 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v hgtp7n60c3d, hgt1s7n60c3ds
?2001 fairchild semiconductor corporation hgtp7n60c3d, hgt1s7n60c3ds rev. b figure 13. operating frequency vs collector to emitter current figure 14. minimum switching safe operating area figure 15. capacitance vs collector to emitter voltage figure 16. gate charge waveforms figure 17. igbt normalized transient thermal impedance, junction to case typical performance curves (continued) i ce , collector to emitter current (a) f max , operating frequency (khz) 2102030 10 100 200 1 t j = 150 o c, t c = 75 o c r g = 50 ? , l = 1mh v ge = 15v v ge = 10v f max2 = (p d - p c )/(e on + e off ) p d = allowable dissipation p c = conduction dissipation f max1 = 0.05/(t d(off)i + t d(on)i ) (duty factor = 50%) r jc = 2.1 o c/w v ce(pk) , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 100 200 300 400 500 600 0 10 20 30 40 t j = 150 o c, v ge = 15v, r g = 50 ? , l = 1mh 50 c oes c res v ce , collector to emitter voltage (v) 05 10 15 20 25 0 1000 1200 c, capacitance (pf) c ies frequency = 1mhz 800 600 400 200 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) q g , gate charge (nc) 0 300 200 400 500 600 15 12.5 10 7.5 5 0 5 10 15 20 25 30 0 100 2.5 v ce = 600v v ce = 400v v ce = 200v i g(ref) = 1.044ma, r l = 50 ? , t c = 25 o c t 1 , rectangular pulse duration (s) 10 -5 10 -3 10 0 10 1 10 -4 10 -1 10 -2 10 0 z jc , normalized thermal response 10 -1 10 -2 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse 0.5 0.2 0.1 0.05 0.02 0.01 t 1 t 2 p d hgtp7n60c3d, hgt1s7n60c3ds
?2001 fairchild semiconductor corporation hgtp7n60c3d, hgt1s7n60c3ds rev. b figure 18. diode forward current vs forward voltage drop figure 19. recovery times vs forward current typical performance curves (continued) 25 o c 175 o c 100 o c 0.5 1.0 1.5 2.5 3.0 i ec , forward current (a) v ec , forward voltage (v) 0 2.0 1.0 0.5 10 30 t b t a t rr 30 20 10 0 t r , recovery times (ns) i ec , forward current (a) t c = 25 o c, di ec /dt = 200a/ s 0.5 7 13 25 15 5 test circuit and waveforms figure 20. inductive switching test ci rcuit figure 21. switching test waveforms r g = 50 ? l = 1mh v dd = 480v + - rhrd660 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on hgtp7n60c3d, hgt1s7n60c3ds
?2001 fairchild semiconductor corporation hgtp7n60c3d, hgt1s7n60c3ds rev. b handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static c harge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precauti ons are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as eccosorbd ? ld26 or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. ci rcuits that leave the gate open- circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 13) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 4, 7, 8, 11 and 12. the operating frequency plot (figure 13) of a typical device shows f max1 or f max2 whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 21. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on ). the allowable dissipation (p d ) is defined by p d = (t jm - t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 13) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on and e off are defined in the switching waveforms shown in figure 21. e on is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss during turn-off. all tail losses are included in the calculation for e off ; i.e. the collector current equals zero (i ce = 0). hgtp7n60c3d, hgt1s7n60c3ds
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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